Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Bipolar transistorDescription: Universal PNP transistor, Nexperia # # # bipolar transistor, Nexperia5422
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Category: Bipolar transistorDescription: High voltage transistor, Nexperia # # # bipolar transistor, Nexperia3163
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Category: Bipolar transistorDescription: NXP PBSS9110Z Single transistor bipolar, PNP, 100 V, 650 mW, 1 A, 150 hFE7014
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Category: Bipolar transistorDescription: Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia3302
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Category: Bipolar transistorDescription: NXP PBSS4032NZ Single transistor bipolar, NPN, 30 V, 145 MHz, 700 mW, 4.9 A, 500 hFE9183
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Category: Bipolar transistorDescription: NXP PBSS4021PZ Single transistor bipolar, PNP, -20 V, 85 MHz, 770 mW, -6.6 A, 400 hFE9660
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Category: Bipolar transistorDescription: NXP PBSS303NZ Single transistor bipolar, NPN, 30 V, 130 MHz, 2 W, 5.5 A, 250 hFE5276
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Category: Bipolar transistorDescription: PNP Transistors, NXP series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, NXP Semiconductors7360
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Category: Bipolar transistorDescription: Low saturation voltage PNP transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia6928
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Category: Bipolar transistorDescription: NXP PBHV8115Z Single transistor bipolar, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE3654
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Category: Bipolar transistorDescription: NXP PBHV9040Z Single transistor bipolar, PNP, -400 V, 55 MHz, 700 mW, -250 mA, 200 hFE1149
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Category: Bipolar transistorDescription: High voltage transistor, Nexperia # # # bipolar transistor, Nexperia8950
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Category: Bipolar transistorDescription: NXP PBHV8140Z Single transistor bipolar, NPN, 400 V, 25 MHz, 730 mW, 1 A, 155 hFE4301
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Category: Bipolar transistorDescription: NXP BCP56-16T Bipolar (BJT) Single Transistor, NPN, 80V, 180MHz, 650mW, 1A, 100 hFE New1570
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Category: Bipolar transistorDescription: PNP 晶体管,超过 1.5A,Diodes Inc ### 双极晶体管,Diodes Inc ### 晶体管,Diodes Inc1133
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Category: Bipolar transistorDescription: PNP 晶体管,超过 1.5A,Diodes Inc ### 双极晶体管,Diodes Inc ### 晶体管,Diodes Inc4311
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Category: Bipolar transistorDescription: FZT458TA NPN三极管 400V 300mA/0.3A 50MHz 100~300 500mV/0.5V SOT-223 marking/标记 FZT458 高压晶体管6931
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Category: Bipolar transistorDescription: NPN 晶体管,超过 1.5A,Diodes Inc ### 双极晶体管,Diodes Inc ### 晶体管,Diodes Inc3844
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Category: Bipolar transistorDescription: ON SEMICONDUCTOR BCP69T1G 单晶体管 双极, 通用, PNP, -20 V, 60 MHz, 1.5 W, -1 A, 375 hFE1212
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Category: Bipolar transistorDescription: PNP 晶体管,超过 1.5A,Diodes Inc ### 双极晶体管,Diodes Inc ### 晶体管,Diodes Inc6968
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Category: Bipolar transistorDescription: NPN 晶体管,超过 1.5A,Diodes Inc ### 双极晶体管,Diodes Inc ### 晶体管,Diodes Inc9490
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Category: Bipolar transistorDescription: PNP 晶体管,超过 1.5A,Diodes Inc ### 双极晶体管,Diodes Inc ### 晶体管,Diodes Inc8196
